features thin 95 m chip reduced forward voltage 3.2 v typical at 20 ma razerthin led performance 460nm - 3.8-11.1 mw 470nm - 3.4-10.4 mw 505nm - 2.0-6.5 mw 527nm - 1.7-6.0 mw single wire bond structure class 2 esd rating ? ? C ? C C C C ? ? applications mobile phone key pads white leds blue leds green leds cellular phone lcd backlighting digital camera flash for mobile appliances automotive dashboard lighting led video displays audio product display lighting ? C C C ? ? ? ? ? razerthin ? leds c xxx rt290-s0200 crees razerthin leds are a new generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary g?sic? substrate to deliver superior price/performance for high-intensity blue and green leds. these vertically structured led chips are approximately 95 microns in height and require a low forward voltage. crees razerthin series chips have the ability to withstand 1000v esd. applications for razerthin leds include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required. d a t a s h e e t : c p r 3 c l , r e v . b c xxx rt290-s0200 chip diagram top view bottom view g?sic led chip 270 x 270 m sic substrate h = 95 m backside metallization gold bond pad 110 m diameter die cross section cathode (-) anode (+) mesa (junction) 246 x 246 m ingan subject to change without notice. www.cree.com
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. 2 cpr3cl rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes &3 c xxx rt290-s0200 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] min. typ. max. max. c460rt290-s0200 2.7 3.2 3.7 1 c470rt290-s0200 2.7 3.2 3.7 1 c505rt290-s0200 2.7 3.2 3.7 1 C527RT290-S0200 2.7 3.2 3.7 1 mechanical specifcations c xxx rt290-s0200 description dimension tolerance p-n junction area (m) 246 x 246 25 top area (m) 270 x 270 25 bottom area (m) 270 x 270 25 chip thickness (m) 95 15 au bond pad diameter (m) 110 20 au bond pad thickness (m) 1.2 0.5 back contact metal width (m) 20 10 notes: maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. seller makes no representations regarding ratings for packages other than the t-1 3/4 package used by seller. the forward currents (dc and peak) are not limited by the g?sic die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temper ature must not exceed 325c (< 5 seconds). product resistance to electrostatic discharge (esd) is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. seller gives no other assurances regarding the ability of products to withstand esd. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are the average values expected by seller in large quantities and are provided for information only. seller gives no assurances products shipped will exhibit such typical ratings. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). dominant wavelength measurements taken using illuminance e. specifcations are subject to change without notice. 1. 2. 3. 4.
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. 3 cpr3cl rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx rt290-s0200 all led chips are sorted onto die sheets according to the bins shown below. all dominant wavelength and radiant fux values are specifed at if = 20 ma. c460rt290-s0200 c460rt290-0205 c460rt290-0206 c460rt290-0207 c460rt290-0208 c460rt290-0201 c460rt290-0202 c460rt290-0203 c460rt290-0204 455 nm 457.5 nm 460 nm 462.5 nm 465 nm 11.1 mw 7.2 mw 3.8 mw dominant wavelength radiant flux c470rt290-s0200 c470rt290-0205 c470rt290-0206 c470rt290-0207 c470rt290-0208 c470rt290-0201 c470rt290-0202 c470rt290-0203 c470rt290-0204 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 10.4 mw 6.7 mw 3.4 mw dominant wavelength radiant flux C527RT290-S0200 c527rt290-0204 c527rt290-0205 c527rt290-0206 c527rt290-0201 c527rt290-0202 c527rt290-0203 520 nm 525 nm 530 nm 535 nm 6.0 mw 3.5 mw 1.7 mw dominant wavelength radiant flux c505rt290-s0200 c505rt290-0203 c505rt290-0204 c505rt290-0201 c505rt290-0202 500 nm 505 nm 510 nm 6.5 mw 4.0 mw 2.0 mw dominant wavelength radiant flux
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and razerthin are registered trademarks of cree, inc. 4 cpr3cl rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the razerthin products. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. forward current vs. forward voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vf (v) if (ma) wavelength shift vs forward current -4.00 -2.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 0 5 10 15 20 25 30 if (ma) shift (nm) 460nm 527nm 505nm relative intensity vs peak wavelength relative intensity (%) wavelength (nm) 400 500 600 20 40 60 80 100 relative intensity vs forward current 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 if(ma) % intensity
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